IRF2903ZPBF транзистор MOSFET N-CH 30V 260A 2.4mOhm 160nC, TO-220 290W

IRF2903ZPBF транзистор MOSFET N-CH 30V 260A 2.4mOhm 160nC, TO-220 290W

Зображення слугують тільки для ознайомлення

Див. специфікації продукту

Manufacturer:
Infineon



Product Category:
MOSFETs



RoHS:




Technology:
Si



Mounting Style:
Through Hole



Package/Case:
TO-220-3



Transistor Polarity:
N-Channel



Number of Channels:
1 Channel



Vds - Drain-Source Breakdown Voltage:
30 V



Id - Continuous Drain Current:
75 A



Rds On - Drain-Source Resistance:
2.4 mOhms



Vgs - Gate-Source Voltage:
- 20 V, + 20 V



Vgs th - Gate-Source Threshold Voltage:
4 V



Qg - Gate Charge:
160 nC



Minimum Operating Temperature:
- 55 C



Maximum Operating Temperature:
+ 175 C



Pd - Power Dissipation:
290 W



Channel Mode:
Enhancement



Packaging:
Tube



Brand:
Infineon Technologies



Configuration:
Single



Fall Time:
37 ns



Forward Transconductance - Min:
120 S



Height:
15.65 mm



Length:
10 mm



Product Type:
MOSFETs



Rise Time:
100 ns




1000



Subcategory:
Transistors



Transistor Type:
1 N-Channel



Typical Turn-Off Delay Time:
48 ns



Typical Turn-On Delay Time:
24 ns



Width:
4.4 mm



Unit Weight:
2 g