IRF2204PBF транзистор MOSFET N-CH 40V 210A 3.6mOhm 130nC, TO-220 330W
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Див. специфікації продукту
Manufacturer:
Product Category:
MOSFETs
RoHS:
Technology:
Si
Mounting Style:
Through Hole
Package/Case:
TO-220-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
210 A
Rds On - Drain-Source Resistance:
3.6 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2 V
Qg - Gate Charge:
130 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
330 W
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
Infineon Technologies
Configuration:
Single
Height:
15.65 mm
Length:
10 mm
Product Type:
MOSFETs
50
Subcategory:
Transistors
Transistor Type:
1 N-Channel
Width:
4.4 mm
Unit Weight:
2 g