IRF3415PBF транзистор MOSFET N-CH 150V 43A 42mOhm 133.3nC 200W

IRF3415PBF транзистор MOSFET N-CH 150V 43A 42mOhm 133.3nC 200W

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Manufacturer:
Infineon



Product Category:
MOSFETs



RoHS:




Technology:
Si



Mounting Style:
Through Hole



Package/Case:
TO-220-3



Transistor Polarity:
N-Channel



Number of Channels:
1 Channel



Vds - Drain-Source Breakdown Voltage:
150 V



Id - Continuous Drain Current:
43 A



Rds On - Drain-Source Resistance:
42 mOhms



Vgs - Gate-Source Voltage:
- 20 V, + 20 V



Vgs th - Gate-Source Threshold Voltage:
2 V



Qg - Gate Charge:
133.3 nC



Minimum Operating Temperature:
- 55 C



Maximum Operating Temperature:
+ 175 C



Pd - Power Dissipation:
200 W



Channel Mode:
Enhancement



Packaging:
Tube



Brand:
Infineon Technologies



Configuration:
Single



Height:
15.65 mm



Length:
10 mm



Product Type:
MOSFETs




1000



Subcategory:
Transistors



Transistor Type:
1 N-Channel



Width:
4.4 mm



Unit Weight:
2 g