IRF2805PBF транзистор MOSFET N-CH 55V 175A 4.7mOhm 150nC, TO-220 330W

IRF2805PBF транзистор MOSFET N-CH 55V 175A 4.7mOhm 150nC, TO-220 330W

Зображення слугують тільки для ознайомлення

Див. специфікації продукту

Manufacturer:
Infineon



Product Category:
MOSFETs



RoHS:




Technology:
Si



Mounting Style:
Through Hole



Package/Case:
TO-220-3



Transistor Polarity:
N-Channel



Number of Channels:
1 Channel



Vds - Drain-Source Breakdown Voltage:
55 V



Id - Continuous Drain Current:
175 A



Rds On - Drain-Source Resistance:
4.7 mOhms



Vgs - Gate-Source Voltage:
- 20 V, + 20 V



Vgs th - Gate-Source Threshold Voltage:
4 V



Qg - Gate Charge:
150 nC



Minimum Operating Temperature:
- 55 C



Maximum Operating Temperature:
+ 175 C



Pd - Power Dissipation:
330 W



Channel Mode:
Enhancement



Packaging:
Tube



Brand:
Infineon Technologies



Configuration:
Single



Fall Time:
110 ns



Forward Transconductance - Min:
91 S



Height:
15.65 mm



Length:
10 mm



Product Type:
MOSFETs



Rise Time:
120 ns




1000



Subcategory:
Transistors



Transistor Type:
1 N-Channel



Typical Turn-Off Delay Time:
68 ns



Typical Turn-On Delay Time:
14 ns



Width:
4.4 mm



Unit Weight:
2 g